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A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching
Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang
2013
Source PublicationJ. Phys. Chem. C
Volume117Issue:47Pages:25090–25096
Subject Area微电子学
Indexed BySCI
Language英语
Date Available2014-04-09
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24720
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang. A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching[J]. J. Phys. Chem. C,2013,117(47):25090–25096.
APA Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang.(2013).A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching.J. Phys. Chem. C,117(47),25090–25096.
MLA Yangyang Qi , Zhen Wang , Mingliang Zhang , Fuhua Yang , and Xiaodong Wang."A Processing Window for Fabricating Heavily Doped Silicon Nanowires by Metal-Assisted Chemical Etching".J. Phys. Chem. C 117.47(2013):25090–25096.
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