| Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials | |
| Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An | |
| 2013 | |
| Source Publication | Acta Physica Sinica
 |
| Volume | 62Issue:11Pages:117303 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-09 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24714 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials[J]. Acta Physica Sinica,2013,62(11):117303. |
| APA | Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An.(2013).Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials.Acta Physica Sinica,62(11),117303. |
| MLA | Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An."Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials".Acta Physica Sinica 62.11(2013):117303. |
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| File Name/Size | DocType | Version | Access | License | ||
| Effect of co-implant（345KB） | 限制开放 | License | Application Full Text | |||
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