Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature | |
Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan | |
2013 | |
Source Publication | Materials Science in Semiconductor Processing
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Volume | 16Issue:3Pages:987–991 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-04-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24675 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan. Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature[J]. Materials Science in Semiconductor Processing,2013,16(3):987–991. |
APA | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan.(2013).Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature.Materials Science in Semiconductor Processing,16(3),987–991. |
MLA | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan."Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature".Materials Science in Semiconductor Processing 16.3(2013):987–991. |
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The dependence of op(738KB) | 限制开放 | License | Application Full Text |
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