| Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature | |
| Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan | |
| 2013 | |
| Source Publication | Materials Science in Semiconductor Processing
 |
| Volume | 16Issue:3Pages:987–991 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-04-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24675 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan. Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature[J]. Materials Science in Semiconductor Processing,2013,16(3):987–991. |
| APA | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan.(2013).Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature.Materials Science in Semiconductor Processing,16(3),987–991. |
| MLA | Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan."Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature".Materials Science in Semiconductor Processing 16.3(2013):987–991. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The dependence of op（738KB） | 限制开放 | License | Application Full Text | |||
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