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Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan
2013
Source PublicationMaterials Science in Semiconductor Processing
Volume16Issue:3Pages:987–991
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24675
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan. Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature[J]. Materials Science in Semiconductor Processing,2013,16(3):987–991.
APA Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan.(2013).Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature.Materials Science in Semiconductor Processing,16(3),987–991.
MLA Shaoxu Hu, Peide Han, Yanhong Mi, Yupeng Xing, Peng Liang, Yujie Fan."Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature".Materials Science in Semiconductor Processing 16.3(2013):987–991.
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