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Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth
J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz
2013
Source PublicationECS Solid State Lett.
Volume2Issue:9Pages:73-75
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-04
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24665
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz. Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth[J]. ECS Solid State Lett.,2013,2(9):73-75.
APA J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz.(2013).Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth.ECS Solid State Lett.,2(9),73-75.
MLA J. J. Wen, Z. Liu, L. L. Li, C. Li, C. L. Xue, Y. H. Zuo, C. B. Li, Q. M. Wang and B. W. Chengz."Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth".ECS Solid State Lett. 2.9(2013):73-75.
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