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Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
Su, SJ; Zhang, DL; Zhang, GZ; Xue, CL; Cheng, BW
2013
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume64Pages:543
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-04
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24664
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Su, SJ,Zhang, DL,Zhang, GZ,et al. Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy[J]. SUPERLATTICES AND MICROSTRUCTURES,2013,64:543.
APA Su, SJ,Zhang, DL,Zhang, GZ,Xue, CL,&Cheng, BW.(2013).Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy.SUPERLATTICES AND MICROSTRUCTURES,64,543.
MLA Su, SJ,et al."Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy".SUPERLATTICES AND MICROSTRUCTURES 64(2013):543.
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