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Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
SU Shao-Jian, HAN Gen-Quan, ZHANG Dong-Liang, ZHANG Guang-Ze, XUE Chun-Lai, WANG Qi-Ming, CHENG Bu-Wen
2013
Source PublicationChin. Phys. Lett.
Volume30Issue:11Pages:118501
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-04
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24663
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
SU Shao-Jian, HAN Gen-Quan, ZHANG Dong-Liang, ZHANG Guang-Ze, XUE Chun-Lai, WANG Qi-Ming, CHENG Bu-Wen. Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer[J]. Chin. Phys. Lett.,2013,30(11):118501.
APA SU Shao-Jian, HAN Gen-Quan, ZHANG Dong-Liang, ZHANG Guang-Ze, XUE Chun-Lai, WANG Qi-Ming, CHENG Bu-Wen.(2013).Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer.Chin. Phys. Lett.,30(11),118501.
MLA SU Shao-Jian, HAN Gen-Quan, ZHANG Dong-Liang, ZHANG Guang-Ze, XUE Chun-Lai, WANG Qi-Ming, CHENG Bu-Wen."Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer".Chin. Phys. Lett. 30.11(2013):118501.
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