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Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate
Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming
2013
Source PublicationChinese Physics B
Volume22Issue:11Pages:116804
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2014-04-04
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24662
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate[J]. Chinese Physics B,2013,22(11):116804.
APA Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming.(2013).Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate.Chinese Physics B,22(11),116804.
MLA Liu Zhi, Cheng Bu-Wen, Li Ya-Ming, Li Chuan-Bo, Xue Chun-Lai, Wang Qi-Ming."Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate".Chinese Physics B 22.11(2013):116804.
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