High bandwidth surface-illuminated InGaAsInP uni-travelling-carrier photodetector | |
Li Chong, Xue Chun-Lai, Li Chuan-Bo, Liu Zhi, Cheng Bu-Wen, Wang Qi-Ming | |
2013 | |
Source Publication | Chin. Phys. B
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Volume | 22Issue:11Pages:118503 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-04-04 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24653 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Li Chong, Xue Chun-Lai, Li Chuan-Bo, Liu Zhi, Cheng Bu-Wen, Wang Qi-Ming. High bandwidth surface-illuminated InGaAsInP uni-travelling-carrier photodetector[J]. Chin. Phys. B,2013,22(11):118503. |
APA | Li Chong, Xue Chun-Lai, Li Chuan-Bo, Liu Zhi, Cheng Bu-Wen, Wang Qi-Ming.(2013).High bandwidth surface-illuminated InGaAsInP uni-travelling-carrier photodetector.Chin. Phys. B,22(11),118503. |
MLA | Li Chong, Xue Chun-Lai, Li Chuan-Bo, Liu Zhi, Cheng Bu-Wen, Wang Qi-Ming."High bandwidth surface-illuminated InGaAsInP uni-travelling-carrier photodetector".Chin. Phys. B 22.11(2013):118503. |
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