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Electron delocalization in gate-tunable gapless silicene
Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li
2013
Source PublicationPhys. Rev. B
Volume88Pages:125431
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24590
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714		 Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li. Electron delocalization in gate-tunable gapless silicene[J]. Phys. Rev. B,2013,88:125431.
APA Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li.(2013).Electron delocalization in gate-tunable gapless silicene.Phys. Rev. B,88,125431.
MLA Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li."Electron delocalization in gate-tunable gapless silicene".Phys. Rev. B 88(2013):125431.
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