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Electron delocalization in gate-tunable gapless silicene | |
Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li | |
2013 | |
Source Publication | Phys. Rev. B
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Volume | 88Pages:125431 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-03-26 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24590 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li. Electron delocalization in gate-tunable gapless silicene[J]. Phys. Rev. B,2013,88:125431. |
APA | Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li.(2013).Electron delocalization in gate-tunable gapless silicene.Phys. Rev. B,88,125431. |
MLA | Yan-Yang Zhang, Wei-Feng Tsai, Kai Chang, X. -T. An, G. -P. Zhang, X. -C. Xie, Shu-Shen Li."Electron delocalization in gate-tunable gapless silicene".Phys. Rev. B 88(2013):125431. |
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Electron delocalizat(401KB) | 限制开放 | License | Application Full Text |
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