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Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells
Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang
2013
Source PublicationPhysical Review Letters
Volume111Issue:15Pages:6402
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24572
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang. Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells[J]. Physical Review Letters,2013,111(15):6402.
APA Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang.(2013).Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells.Physical Review Letters,111(15),6402.
MLA Dong Zhang, Wenkai Lou, Maosheng Miao, Shou-cheng Zhang, Kai Chang."Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells".Physical Review Letters 111.15(2013):6402.
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