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Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
Cheng, Fang; Lin, L. Z.; Zhang, L. B.; Zhou, Guanghui
2013
Source PublicationJournal of Applied Physics
Volume113Issue:5Pages:053708 - 053708-3
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24571
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Cheng, Fang,Lin, L. Z.,Zhang, L. B.,et al. Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar[J]. Journal of Applied Physics,2013,113(5):053708 - 053708-3.
APA Cheng, Fang,Lin, L. Z.,Zhang, L. B.,&Zhou, Guanghui.(2013).Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar.Journal of Applied Physics,113(5),053708 - 053708-3.
MLA Cheng, Fang,et al."Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar".Journal of Applied Physics 113.5(2013):053708 - 053708-3.
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