SEMI OpenIR  > 中科院半导体材料科学重点实验室
Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface
Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng
2013
Source PublicationApplied Surface Science
Volume280Pages:500–503
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24567
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng. Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface[J]. Applied Surface Science,2013,280:500–503.
APA Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng.(2013).Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface.Applied Surface Science,280,500–503.
MLA Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng."Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface".Applied Surface Science 280(2013):500–503.
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