SEMI OpenIR  > 中科院半导体材料科学重点实验室
Theoretical study of transport property in InAsSb quantum well heterostructures
Zhang, Yuwei; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Chengyan; Zeng, Yiping
2013
Source PublicationJournal of Applied Physics
Volume114Issue:15Pages:3707
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24564
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Yuwei,Zhang, Yang,Guan, Min,et al. Theoretical study of transport property in InAsSb quantum well heterostructures[J]. Journal of Applied Physics,2013,114(15):3707.
APA Zhang, Yuwei,Zhang, Yang,Guan, Min,Cui, Lijie,Wang, Chengyan,&Zeng, Yiping.(2013).Theoretical study of transport property in InAsSb quantum well heterostructures.Journal of Applied Physics,114(15),3707.
MLA Zhang, Yuwei,et al."Theoretical study of transport property in InAsSb quantum well heterostructures".Journal of Applied Physics 114.15(2013):3707.
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