| AlGaN/GaN Schottky Diode Fabricated by Au Free Process | |
| Lifang Jia; Wei Yan; Zhongchao Fan; Zhi He; Xiaodong Wang; Guohong Wang; Fuhua Yang | |
| 2013 | |
| Source Publication | Electron Device Letters, IEEE
 |
| Volume | 34Issue:10Pages:1235 - 1237 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-03-26 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24561 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | Lifang Jia,Wei Yan,Zhongchao Fan,et al. AlGaN/GaN Schottky Diode Fabricated by Au Free Process[J]. Electron Device Letters, IEEE,2013,34(10):1235 - 1237. |
| APA | Lifang Jia.,Wei Yan.,Zhongchao Fan.,Zhi He.,Xiaodong Wang.,...&Fuhua Yang.(2013).AlGaN/GaN Schottky Diode Fabricated by Au Free Process.Electron Device Letters, IEEE,34(10),1235 - 1237. |
| MLA | Lifang Jia,et al."AlGaN/GaN Schottky Diode Fabricated by Au Free Process".Electron Device Letters, IEEE 34.10(2013):1235 - 1237. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| AlGaNGaN Schottky Di（712KB） | 限制开放 | License | Application Full Text | |||
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