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AlGaN/GaN Schottky Diode Fabricated by Au Free Process
Lifang Jia; Wei Yan; Zhongchao Fan; Zhi He; Xiaodong Wang; Guohong Wang; Fuhua Yang
2013
Source PublicationElectron Device Letters, IEEE
Volume34Issue:10Pages:1235 - 1237
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24561
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Lifang Jia,Wei Yan,Zhongchao Fan,et al. AlGaN/GaN Schottky Diode Fabricated by Au Free Process[J]. Electron Device Letters, IEEE,2013,34(10):1235 - 1237.
APA Lifang Jia.,Wei Yan.,Zhongchao Fan.,Zhi He.,Xiaodong Wang.,...&Fuhua Yang.(2013).AlGaN/GaN Schottky Diode Fabricated by Au Free Process.Electron Device Letters, IEEE,34(10),1235 - 1237.
MLA Lifang Jia,et al."AlGaN/GaN Schottky Diode Fabricated by Au Free Process".Electron Device Letters, IEEE 34.10(2013):1235 - 1237.
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