SEMI OpenIR  > 中科院半导体材料科学重点实验室
Doping and electrical properties of cubic boron nitride thin films A critical review
X.W. Zhang
2013
Source PublicationThin Solid Films
Volume544Pages:2–12
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24558
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
X.W. Zhang. Doping and electrical properties of cubic boron nitride thin films A critical review[J]. Thin Solid Films,2013,544:2–12.
APA X.W. Zhang.(2013).Doping and electrical properties of cubic boron nitride thin films A critical review.Thin Solid Films,544,2–12.
MLA X.W. Zhang."Doping and electrical properties of cubic boron nitride thin films A critical review".Thin Solid Films 544(2013):2–12.
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