SEMI OpenIR  > 中科院半导体材料科学重点实验室
Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method
Yuan, L. ,Tao, L.; Yu, H.; Chen, W.; Lu, D.; Li, Y.; Ran, G.; Pan, J.
2013
Source PublicationPhotonics Technology Letters
Volume25Issue:12Pages:1180 - 1183
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24550
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yuan, L. ,Tao, L.,Yu, H.,Chen, W.,et al. Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method[J]. Photonics Technology Letters,2013,25(12):1180 - 1183.
APA Yuan, L. ,Tao, L..,Yu, H..,Chen, W..,Lu, D..,Li, Y..,...&Pan, J..(2013).Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method.Photonics Technology Letters,25(12),1180 - 1183.
MLA Yuan, L. ,Tao, L.,et al."Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method".Photonics Technology Letters 25.12(2013):1180 - 1183.
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