SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells
Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo
2013
Source PublicationChinese Physics B
Volume22Issue:7Pages:7305
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24548
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo. Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells[J]. Chinese Physics B,2013,22(7):7305.
APA Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo.(2013).Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells.Chinese Physics B,22(7),7305.
MLA Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo."Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells".Chinese Physics B 22.7(2013):7305.
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