| 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure. | |
| Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y. | |
| 2013 | |
| Source Publication | Optics Letters
 |
| Volume | 38Issue:22Pages:4868-4871 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-03-18 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24547 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.. 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.[J]. Optics Letters,2013,38(22):4868-4871. |
| APA | Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y..(2013).1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure..Optics Letters,38(22),4868-4871. |
| MLA | Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.."1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.".Optics Letters 38.22(2013):4868-4871. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 1.06-μm InGaAsGaAs m（854KB） | 限制开放 | License | Application Full Text | |||
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