SEMI OpenIR  > 中科院半导体材料科学重点实验室
1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.
Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.
2013
Source PublicationOptics Letters
Volume38Issue:22Pages:4868-4871
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24547
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.. 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.[J]. Optics Letters,2013,38(22):4868-4871.
APA Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y..(2013).1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure..Optics Letters,38(22),4868-4871.
MLA Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.."1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.".Optics Letters 38.22(2013):4868-4871.
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