| The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy | |
| WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong | |
| 2013 | |
| Source Publication | Chinese Physics Letters
 |
| Volume | 30Issue:5Pages:7101 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-03-18 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24546 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong. The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy[J]. Chinese Physics Letters,2013,30(5):7101. |
| APA | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong.(2013).The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy.Chinese Physics Letters,30(5),7101. |
| MLA | WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, FENG Chun, DENG Qing-Wen, QU Shen-Qi, ZHANG Jing-Wen3, HOU Xun, CAI Shu-Jun, FENG Zhi-Hong."The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy".Chinese Physics Letters 30.5(2013):7101. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The Valence Band Off（974KB） | 限制开放 | License | Application Full Text | |||
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