SEMI OpenIR  > 中科院半导体材料科学重点实验室
离子注入法制备GaN:Er薄膜的拉曼光谱分析
陶东言 刘超 尹春海 曾一平
2013
Source Publication光谱学与光谱分析
Volume33Issue:3Pages:699-703
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24545
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
陶东言 刘超 尹春海 曾一平. 离子注入法制备GaN:Er薄膜的拉曼光谱分析[J]. 光谱学与光谱分析,2013,33(3):699-703.
APA 陶东言 刘超 尹春海 曾一平.(2013).离子注入法制备GaN:Er薄膜的拉曼光谱分析.光谱学与光谱分析,33(3),699-703.
MLA 陶东言 刘超 尹春海 曾一平."离子注入法制备GaN:Er薄膜的拉曼光谱分析".光谱学与光谱分析 33.3(2013):699-703.
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