Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer | |
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang | |
2013 | |
Source Publication | Journal of Alloys and Compounds
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Volume | 576Pages:48–53 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-03-18 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24540 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang. Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer[J]. Journal of Alloys and Compounds,2013,576:48–53. |
APA | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang.(2013).Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer.Journal of Alloys and Compounds,576,48–53. |
MLA | Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang."Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer".Journal of Alloys and Compounds 576(2013):48–53. |
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Bipolar characterist(1198KB) | 限制开放 | License | Application Full Text |
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