SEMI OpenIR  > 中科院半导体材料科学重点实验室
The effect of magnetic ordering on light emitting intensity of Eu-doped GaN
Yanchen Li, Sheng Yu, Xianquan Meng, Yihe Liu, Yonghe Zhao, Feng qi Liu and Zhanguo Wang
2013
Source PublicationJournal of Physics D: Applied Physics
Volume46Issue:21Pages:215101
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24536
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yanchen Li, Sheng Yu, Xianquan Meng, Yihe Liu, Yonghe Zhao, Feng qi Liu and Zhanguo Wang. The effect of magnetic ordering on light emitting intensity of Eu-doped GaN[J]. Journal of Physics D: Applied Physics,2013,46(21):215101.
APA Yanchen Li, Sheng Yu, Xianquan Meng, Yihe Liu, Yonghe Zhao, Feng qi Liu and Zhanguo Wang.(2013).The effect of magnetic ordering on light emitting intensity of Eu-doped GaN.Journal of Physics D: Applied Physics,46(21),215101.
MLA Yanchen Li, Sheng Yu, Xianquan Meng, Yihe Liu, Yonghe Zhao, Feng qi Liu and Zhanguo Wang."The effect of magnetic ordering on light emitting intensity of Eu-doped GaN".Journal of Physics D: Applied Physics 46.21(2013):215101.
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