Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor | |
Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo | |
2013 | |
Source Publication | Chin. Phys. B
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Volume | 22Issue:6Pages:067203 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Date Available | 2014-03-18 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24535 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo. Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor[J]. Chin. Phys. B,2013,22(6):067203. |
APA | Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo.(2013).Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor.Chin. Phys. B,22(6),067203. |
MLA | Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo."Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor".Chin. Phys. B 22.6(2013):067203. |
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