| Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor | |
| Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo | |
| 2013 | |
| Source Publication | Chin. Phys. B
 |
| Volume | 22Issue:6Pages:067203 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Date Available | 2014-03-18 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24535 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo. Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor[J]. Chin. Phys. B,2013,22(6):067203. |
| APA | Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo.(2013).Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor.Chin. Phys. B,22(6),067203. |
| MLA | Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo."Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor".Chin. Phys. B 22.6(2013):067203. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Electron mobility in（549KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment