SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration
Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo
2013
Source PublicationChinese Physics B
Volume22Issue:4Pages:048102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24527
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo. InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration[J]. Chinese Physics B,2013,22(4):048102.
APA Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo.(2013).InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration.Chinese Physics B,22(4),048102.
MLA Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo."InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration".Chinese Physics B 22.4(2013):048102.
Files in This Item:
File Name/Size DocType Version Access License
InAsGaAs submonolaye(332KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.