InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration | |
Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo | |
2013 | |
Source Publication | Chinese Physics B
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Volume | 22Issue:4Pages:048102 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-03-18 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24527 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo. InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration[J]. Chinese Physics B,2013,22(4):048102. |
APA | Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo.(2013).InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration.Chinese Physics B,22(4),048102. |
MLA | Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo."InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration".Chinese Physics B 22.4(2013):048102. |
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InAsGaAs submonolaye(332KB) | 限制开放 | License | Application Full Text |
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