| InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration | |
| Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo | |
| 2013 | |
| Source Publication | Chinese Physics B
 |
| Volume | 22Issue:4Pages:048102 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-03-18 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24527 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo. InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration[J]. Chinese Physics B,2013,22(4):048102. |
| APA | Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo.(2013).InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration.Chinese Physics B,22(4),048102. |
| MLA | Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo."InAsGaAs submonolayer quantum-dot superluminescent diodes by Using with active multimode interferometer configuration".Chinese Physics B 22.4(2013):048102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| InAsGaAs submonolaye（332KB） | 限制开放 | License | Application Full Text | |||
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