SEMI OpenIR  > 中科院半导体材料科学重点实验室
Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures
Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang
2013
Source PublicationMaterials Letters
Volume107Pages:50–52
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24525
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang. Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures[J]. Materials Letters,2013,107:50–52.
APA Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang.(2013).Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures.Materials Letters,107,50–52.
MLA Ke-Fan Wang, Shengchun Qu, Dewei Liu, Kong Liu, Jian Wang, Li Zhao, Hongliang Zhu, Zhanguo Wang."Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome structures".Materials Letters 107(2013):50–52.
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