SEMI OpenIR  > 中科院半导体材料科学重点实验室
Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system
Ma, Hui; Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai
2013
Source PublicationApplied Physics Letters
Volume102Issue:21Pages:212103 - 212103-5
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24509
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ma, Hui,Jiang, Chongyun,Liu, Yu,et al. Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system[J]. Applied Physics Letters,2013,102(21):212103 - 212103-5.
APA Ma, Hui,Jiang, Chongyun,Liu, Yu,Yu, Jinling,&Chen, Yonghai.(2013).Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system.Applied Physics Letters,102(21),212103 - 212103-5.
MLA Ma, Hui,et al."Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As two-dimensional electron system".Applied Physics Letters 102.21(2013):212103 - 212103-5.
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