SEMI OpenIR  > 中科院半导体材料科学重点实验室
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
2013
Source PublicationApplied Physics Letters
Volume103Issue:23Pages:232109
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24505
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Huijie,Liu, Guipeng,Wei, Hongyuan,et al. Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors[J]. Applied Physics Letters,2013,103(23):232109.
APA Li, Huijie.,Liu, Guipeng.,Wei, Hongyuan.,Jiao, Chunmei.,Wang, Jianxia.,...&Wang, Zhan-Guo.(2013).Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors.Applied Physics Letters,103(23),232109.
MLA Li, Huijie,et al."Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors".Applied Physics Letters 103.23(2013):232109.
Files in This Item:
File Name/Size DocType Version Access License
Scattering due to Sc(790KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li, Huijie]'s Articles
[Liu, Guipeng]'s Articles
[Wei, Hongyuan]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li, Huijie]'s Articles
[Liu, Guipeng]'s Articles
[Wei, Hongyuan]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li, Huijie]'s Articles
[Liu, Guipeng]'s Articles
[Wei, Hongyuan]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.