SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field
Jin, Dong-Dong; Yang, Shao-Yan; Zhang, Liu-Wan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Yang, Tao; Xiang-LinLiu; Zhu, Qin-Sheng; Wang, Zhan-Guo
2013
Source PublicationJournal of Applied Physics
Volume113Issue:21Pages:213711-213711-4
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24501
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Jin, Dong-Dong,Yang, Shao-Yan,Zhang, Liu-Wan,et al. Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field[J]. Journal of Applied Physics,2013,113(21):213711-213711-4.
APA Jin, Dong-Dong.,Yang, Shao-Yan.,Zhang, Liu-Wan.,Li, Hui-jie.,Zhang, Heng.,...&Wang, Zhan-Guo.(2013).Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field.Journal of Applied Physics,113(21),213711-213711-4.
MLA Jin, Dong-Dong,et al."Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field".Journal of Applied Physics 113.21(2013):213711-213711-4.
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