| Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field | |
| Jin, Dong-Dong; Yang, Shao-Yan; Zhang, Liu-Wan; Li, Hui-jie; Zhang, Heng; Wang, Jian-xia; Yang, Tao; Xiang-LinLiu; Zhu, Qin-Sheng; Wang, Zhan-Guo | |
| 2013 | |
| Source Publication | Journal of Applied Physics
 |
| Volume | 113Issue:21Pages:213711-213711-4 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-03-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24501 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Jin, Dong-Dong,Yang, Shao-Yan,Zhang, Liu-Wan,et al. Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field[J]. Journal of Applied Physics,2013,113(21):213711-213711-4. |
| APA | Jin, Dong-Dong.,Yang, Shao-Yan.,Zhang, Liu-Wan.,Li, Hui-jie.,Zhang, Heng.,...&Wang, Zhan-Guo.(2013).Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field.Journal of Applied Physics,113(21),213711-213711-4. |
| MLA | Jin, Dong-Dong,et al."Electron scattering in GaAs-InGaAs quantum wells subjected to an in-plane magnetic field".Journal of Applied Physics 113.21(2013):213711-213711-4. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Electron scattering （545KB） | 限制开放 | License | Application Full Text | |||
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