SEMI OpenIR  > 中科院半导体材料科学重点实验室
Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers
DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei
2013
Source PublicationChinese Physics Letters
Volume30Issue:9Pages:096105
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24496
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei. Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers[J]. Chinese Physics Letters,2013,30(9):096105.
APA DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei.(2013).Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers.Chinese Physics Letters,30(9),096105.
MLA DONG Lin, SUN Guo-Sheng, YU Jun, ZHENG Liu, LIU Xing-Fang, ZHANG Feng, YAN Guo-Guo, LI Xi-Guang, WANG Zhan-Guo, YANG Fei."Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers".Chinese Physics Letters 30.9(2013):096105.
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