SEMI OpenIR  > 中科院半导体材料科学重点实验室
Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces
Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang
2013
Source Publicationphysica status solidi (a)
Volume210Issue:11Pages:2503–2509
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24494
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang. Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces[J]. physica status solidi (a),2013,210(11):2503–2509.
APA Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang.(2013).Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces.physica status solidi (a),210(11),2503–2509.
MLA Lin Dong, Guosheng Sun, Liu Zheng, Xingfang Liu, Feng Zhang, Guoguo Yan, Lixin Tian, Xiguang Li, Zhanguo Wang."Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces".physica status solidi (a) 210.11(2013):2503–2509.
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