SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAs-mediated growth of vertical InSb nanowires on Si substrates
Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang
2013
Source PublicationNanoscale Research Letters
Volume8
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24492
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang. InAs-mediated growth of vertical InSb nanowires on Si substrates[J]. Nanoscale Research Letters,2013,8.
APA Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang.(2013).InAs-mediated growth of vertical InSb nanowires on Si substrates.Nanoscale Research Letters,8.
MLA Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Huayong Pan, Tao Yang, Yonghai Chen, Zhanguo Wang."InAs-mediated growth of vertical InSb nanowires on Si substrates".Nanoscale Research Letters 8(2013).
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