SEMI OpenIR  > 中科院半导体材料科学重点实验室
In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy
J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao
2013
Source PublicationJournal of Applied Physics
Volume113Issue:8Pages:083504- 083504-5
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-02-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24488
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao. In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy[J]. Journal of Applied Physics,2013,113(8):083504- 083504-5.
APA J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao.(2013).In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy.Journal of Applied Physics,113(8),083504- 083504-5.
MLA J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao."In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy".Journal of Applied Physics 113.8(2013):083504- 083504-5.
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