| Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires | |
| Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai | |
| 2013 | |
| Source Publication | RSC Advances
 |
| Issue | 43Pages:19834-19839 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-02-12 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24486 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai. Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires[J]. RSC Advances,2013(43):19834-19839. |
| APA | Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai.(2013).Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires.RSC Advances(43),19834-19839. |
| MLA | Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai."Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires".RSC Advances .43(2013):19834-19839. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 40 王小耶 Synthesis, pr（1123KB） | 限制开放 | License | Application Full Text | |||
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