SEMI OpenIR  > 中科院半导体材料科学重点实验室
Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires
Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
2013
Source PublicationRSC Advances
Issue43Pages:19834-19839
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-02-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24486
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai. Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires[J]. RSC Advances,2013(43):19834-19839.
APA Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai.(2013).Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires.RSC Advances(43),19834-19839.
MLA Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai."Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires".RSC Advances .43(2013):19834-19839.
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