SEMI OpenIR  > 中科院半导体材料科学重点实验室
Impact of double-cap procedure on the characteristics of InAs_InGaAsP_InP quantum dots grown by metal-organic chemical vapor deposition
Shuai Luo, Hai-Ming Ji, Xiao-Guang Yang, Tao Yang
2013
Source PublicationJournal of Crystal Growth
Volume375Pages:100-103
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-02-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24482
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Shuai Luo, Hai-Ming Ji, Xiao-Guang Yang, Tao Yang. Impact of double-cap procedure on the characteristics of InAs_InGaAsP_InP quantum dots grown by metal-organic chemical vapor deposition[J]. Journal of Crystal Growth,2013,375:100-103.
APA Shuai Luo, Hai-Ming Ji, Xiao-Guang Yang, Tao Yang.(2013).Impact of double-cap procedure on the characteristics of InAs_InGaAsP_InP quantum dots grown by metal-organic chemical vapor deposition.Journal of Crystal Growth,375,100-103.
MLA Shuai Luo, Hai-Ming Ji, Xiao-Guang Yang, Tao Yang."Impact of double-cap procedure on the characteristics of InAs_InGaAsP_InP quantum dots grown by metal-organic chemical vapor deposition".Journal of Crystal Growth 375(2013):100-103.
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