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InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition
LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao
2013
Source PublicationChinese Physics Letters
Volume30Issue:6
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-02-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24480
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao. InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition[J]. Chinese Physics Letters,2013,30(6).
APA LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao.(2013).InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition.Chinese Physics Letters,30(6).
MLA LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao."InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition".Chinese Physics Letters 30.6(2013).
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