| InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition | |
| LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao | |
| 2013 | |
| Source Publication | Chinese Physics Letters
 |
| Volume | 30Issue:6 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-02-12 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24480 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao. InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition[J]. Chinese Physics Letters,2013,30(6). |
| APA | LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao.(2013).InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition.Chinese Physics Letters,30(6). |
| MLA | LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao."InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition".Chinese Physics Letters 30.6(2013). |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 38 罗 帅 InAs_InGaAsP（661KB） | 限制开放 | License | Application Full Text | |||
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