InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition | |
LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao | |
2013 | |
Source Publication | Chinese Physics Letters
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Volume | 30Issue:6 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-02-12 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24480 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao. InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition[J]. Chinese Physics Letters,2013,30(6). |
APA | LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao.(2013).InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition.Chinese Physics Letters,30(6). |
MLA | LUO Shuai, JI Hai-Ming, GAO Feng, YANG Xiao-Guang, LIANG Ping, ZHAO Ling-Juan, YANG Tao."InAs_InGaAsP_InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition".Chinese Physics Letters 30.6(2013). |
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38 罗 帅 InAs_InGaAsP(661KB) | 限制开放 | License | Application Full Text |
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