Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping | |
Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang | |
2013 | |
Source Publication | Solar Energy Materials and Solar Cells
![]() |
Volume | 113Pages:144–147 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2014-02-12 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24476 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang. Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping[J]. Solar Energy Materials and Solar Cells,2013,113:144–147. |
APA | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang.(2013).Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping.Solar Energy Materials and Solar Cells,113,144–147. |
MLA | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang."Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping".Solar Energy Materials and Solar Cells 113(2013):144–147. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
37 杨晓光 Improved effi(519KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment