SEMI OpenIR  > 中科院半导体材料科学重点实验室
Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping
Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang
2013
Source PublicationSolar Energy Materials and Solar Cells
Volume113Pages:144–147
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-02-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24476
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang. Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping[J]. Solar Energy Materials and Solar Cells,2013,113:144–147.
APA Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang.(2013).Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping.Solar Energy Materials and Solar Cells,113,144–147.
MLA Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang."Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping".Solar Energy Materials and Solar Cells 113(2013):144–147.
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