| Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping | |
| Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang | |
| 2013 | |
| Source Publication | Solar Energy Materials and Solar Cells
 |
| Volume | 113Pages:144–147 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2014-02-12 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24476 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang. Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping[J]. Solar Energy Materials and Solar Cells,2013,113:144–147. |
| APA | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang.(2013).Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping.Solar Energy Materials and Solar Cells,113,144–147. |
| MLA | Xiaoguang Yang, Kefan Wang, Yongxian Gu, Haiqiao Ni, Xiaodong Wang, Tao Yang, Zhanguo Wang."Improved efficiency of InAs_GaAs quantum dots solar cells by Si-doping".Solar Energy Materials and Solar Cells 113(2013):144–147. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 37 杨晓光 Improved effi（519KB） | 限制开放 | License | Application Full Text | |||
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