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Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact
Wang Xiao-Yong; Chong Ming; Zhao De-Gang; Su Yan-Mei
2012
Source PublicationACTA PHYSICA SINICA
Volume61Issue:21Pages:217302
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-10-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24450
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wang Xiao-Yong,Chong Ming,Zhao De-Gang,et al. Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact[J]. ACTA PHYSICA SINICA,2012,61(21):217302.
APA Wang Xiao-Yong,Chong Ming,Zhao De-Gang,&Su Yan-Mei.(2012).Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact.ACTA PHYSICA SINICA,61(21),217302.
MLA Wang Xiao-Yong,et al."Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact".ACTA PHYSICA SINICA 61.21(2012):217302.
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