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Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles
Tian, Ting; Zhang, Yiyun; Yi, Xiaoyan; Liu, Zhiqiang; Li, Jing; Wang, Guohong
2012
Source PublicationECS SOLID STATE LETTERS
Volume1Issue:2Pages:R5-R8
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-10-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24447
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Tian, Ting,Zhang, Yiyun,Yi, Xiaoyan,et al. Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles[J]. ECS SOLID STATE LETTERS,2012,1(2):R5-R8.
APA Tian, Ting,Zhang, Yiyun,Yi, Xiaoyan,Liu, Zhiqiang,Li, Jing,&Wang, Guohong.(2012).Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles.ECS SOLID STATE LETTERS,1(2),R5-R8.
MLA Tian, Ting,et al."Enhanced Optical and Electrical Properties of GaN-Based Light-Emitting Diodes with Interconnecting Indium Tin Oxide Nanowires Using Self-Assembled NaCl Particles".ECS SOLID STATE LETTERS 1.2(2012):R5-R8.
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