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Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping
Wang, Liancheng; Zhang, Yiyun; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong
2013
Source PublicationRSC ADVANCES
Volume3Issue:10Pages:3359-3364
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-10-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24432
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wang, Liancheng,Zhang, Yiyun,Guo, Enqing,et al. Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping[J]. RSC ADVANCES,2013,3(10):3359-3364.
APA Wang, Liancheng,Zhang, Yiyun,Guo, Enqing,Liu, Zhiqiang,Yi, Xiaoyan,&Wang, Guohong.(2013).Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping.RSC ADVANCES,3(10),3359-3364.
MLA Wang, Liancheng,et al."Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting diodes by acid doping".RSC ADVANCES 3.10(2013):3359-3364.
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