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High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
Su Shao-Jian; Zhang Dong-Liang; Zhang Guang-Ze; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming
2013
Source PublicationACTA PHYSICA SINICA
Volume62Issue:5Pages:058101
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-10-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24426
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Su Shao-Jian,Zhang Dong-Liang,Zhang Guang-Ze,et al. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy[J]. ACTA PHYSICA SINICA,2013,62(5):058101.
APA Su Shao-Jian,Zhang Dong-Liang,Zhang Guang-Ze,Xue Chun-Lai,Cheng Bu-Wen,&Wang Qi-Ming.(2013).High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy.ACTA PHYSICA SINICA,62(5),058101.
MLA Su Shao-Jian,et al."High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy".ACTA PHYSICA SINICA 62.5(2013):058101.
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