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Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer
Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Wang, Hui; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong
2013
Source PublicationAPPLIED PHYSICS LETTERS
Volume102Issue:1Pages:011105
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-10-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24417
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Li, Hongjian,Kang, Junjie,Li, Panpan,et al. Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer[J]. APPLIED PHYSICS LETTERS,2013,102(1):011105.
APA Li, Hongjian.,Kang, Junjie.,Li, Panpan.,Ma, Jun.,Wang, Hui.,...&Wang, Guohong.(2013).Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer.APPLIED PHYSICS LETTERS,102(1),011105.
MLA Li, Hongjian,et al."Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer".APPLIED PHYSICS LETTERS 102.1(2013):011105.
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