| Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer | |
| Li, Hongjian; Kang, Junjie; Li, Panpan; Ma, Jun; Wang, Hui; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong | |
| 2013 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| Volume | 102Issue:1Pages:011105 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-10-08 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24417 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Li, Hongjian,Kang, Junjie,Li, Panpan,et al. Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer[J]. APPLIED PHYSICS LETTERS,2013,102(1):011105. |
| APA | Li, Hongjian.,Kang, Junjie.,Li, Panpan.,Ma, Jun.,Wang, Hui.,...&Wang, Guohong.(2013).Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer.APPLIED PHYSICS LETTERS,102(1),011105. |
| MLA | Li, Hongjian,et al."Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer".APPLIED PHYSICS LETTERS 102.1(2013):011105. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013162.pdf（1035KB） | 限制开放 | License | Application Full Text | |||
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