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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong
2013
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume28Issue:4Pages:045004
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-10-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24413
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Guo, Xiaolu,Ma, Wenquan,Huang, Jianliang,et al. Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2013,28(4):045004.
APA Guo, Xiaolu.,Ma, Wenquan.,Huang, Jianliang.,Zhang, Yanhua.,Wei, Yang.,...&Li, Qiong.(2013).Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,28(4),045004.
MLA Guo, Xiaolu,et al."Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 28.4(2013):045004.
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