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Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering
Yu, Qian; Li, Wenwu; Liang, Jiran; Duan, Zhihua; Hu, Zhigao; Liu, Jian; Chen, Hongda; Chu, Junhao
2013
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume46Issue:5Pages:055310
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-10-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24408
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Yu, Qian,Li, Wenwu,Liang, Jiran,et al. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(5):055310.
APA Yu, Qian.,Li, Wenwu.,Liang, Jiran.,Duan, Zhihua.,Hu, Zhigao.,...&Chu, Junhao.(2013).Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering.JOURNAL OF PHYSICS D-APPLIED PHYSICS,46(5),055310.
MLA Yu, Qian,et al."Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering".JOURNAL OF PHYSICS D-APPLIED PHYSICS 46.5(2013):055310.
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