SEMI OpenIR  > 中科院半导体材料科学重点实验室
Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching
Liu, Kong; Qu, Shengchun; Zhang, Xinhui; Wang, Zhanguo
2013
Source PublicationJOURNAL OF MATERIALS SCIENCE
Volume48Issue:4Pages:1755-1762
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-10-08
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24406
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu, Kong,Qu, Shengchun,Zhang, Xinhui,et al. Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching[J]. JOURNAL OF MATERIALS SCIENCE,2013,48(4):1755-1762.
APA Liu, Kong,Qu, Shengchun,Zhang, Xinhui,&Wang, Zhanguo.(2013).Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching.JOURNAL OF MATERIALS SCIENCE,48(4),1755-1762.
MLA Liu, Kong,et al."Anisotropic characteristics and morphological control of silicon nanowires fabricated by metal-assisted chemical etching".JOURNAL OF MATERIALS SCIENCE 48.4(2013):1755-1762.
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