Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs | |
Zhang, Yanbo; Du, Yandong; Chen, Yankun; Li, Xiaoming; Yang, Xiang; Han, Weihua; Yang, Fuhua | |
2013 | |
Source Publication | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
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Volume | 13Issue:2Pages:804-807 |
Subject Area | 微电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-10-08 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24405 |
Collection | 半导体集成技术工程研究中心 |
Recommended Citation GB/T 7714 | Zhang, Yanbo,Du, Yandong,Chen, Yankun,et al. Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2013,13(2):804-807. |
APA | Zhang, Yanbo.,Du, Yandong.,Chen, Yankun.,Li, Xiaoming.,Yang, Xiang.,...&Yang, Fuhua.(2013).Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,13(2),804-807. |
MLA | Zhang, Yanbo,et al."Low-Temperature Performance of Accumulation-Mode p-Channel Wrap-Gated FinFETs".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 13.2(2013):804-807. |
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