Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate | |
Li, Tianfeng; Gao, Lizhen; Lei, Wen; Guo, Lijun; Yang, Tao; Chen, Yonghai; Wang, Zhanguo | |
2013 | |
Source Publication | NANOSCALE RESEARCH LETTERS
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Volume | 8Pages:27 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-09-22 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24400 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li, Tianfeng,Gao, Lizhen,Lei, Wen,et al. Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate[J]. NANOSCALE RESEARCH LETTERS,2013,8:27. |
APA | Li, Tianfeng.,Gao, Lizhen.,Lei, Wen.,Guo, Lijun.,Yang, Tao.,...&Wang, Zhanguo.(2013).Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.NANOSCALE RESEARCH LETTERS,8,27. |
MLA | Li, Tianfeng,et al."Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate".NANOSCALE RESEARCH LETTERS 8(2013):27. |
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