| Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate | |
| Li, Tianfeng; Gao, Lizhen; Lei, Wen; Guo, Lijun; Yang, Tao; Chen, Yonghai; Wang, Zhanguo | |
| 2013 | |
| Source Publication | NANOSCALE RESEARCH LETTERS
 |
| Volume | 8Pages:27 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-09-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24400 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li, Tianfeng,Gao, Lizhen,Lei, Wen,et al. Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate[J]. NANOSCALE RESEARCH LETTERS,2013,8:27. |
| APA | Li, Tianfeng.,Gao, Lizhen.,Lei, Wen.,Guo, Lijun.,Yang, Tao.,...&Wang, Zhanguo.(2013).Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.NANOSCALE RESEARCH LETTERS,8,27. |
| MLA | Li, Tianfeng,et al."Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate".NANOSCALE RESEARCH LETTERS 8(2013):27. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013158.pdf（451KB） | 限制开放 | License | Application Full Text | |||
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