SEMI OpenIR  > 中科院半导体材料科学重点实验室
Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
Li, Tianfeng; Gao, Lizhen; Lei, Wen; Guo, Lijun; Yang, Tao; Chen, Yonghai; Wang, Zhanguo
2013
Source PublicationNANOSCALE RESEARCH LETTERS
Volume8Pages:27
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24400
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Tianfeng,Gao, Lizhen,Lei, Wen,et al. Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate[J]. NANOSCALE RESEARCH LETTERS,2013,8:27.
APA Li, Tianfeng.,Gao, Lizhen.,Lei, Wen.,Guo, Lijun.,Yang, Tao.,...&Wang, Zhanguo.(2013).Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.NANOSCALE RESEARCH LETTERS,8,27.
MLA Li, Tianfeng,et al."Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate".NANOSCALE RESEARCH LETTERS 8(2013):27.
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