SEMI OpenIR  > 中科院半导体材料科学重点实验室
Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC
Zhang, Feng; Sun, Guosheng; Zeng, Yiping
2013
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume113Issue:4Pages:044112
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24394
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Feng,Sun, Guosheng,Zeng, Yiping. Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC[J]. JOURNAL OF APPLIED PHYSICS,2013,113(4):044112.
APA Zhang, Feng,Sun, Guosheng,&Zeng, Yiping.(2013).Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC.JOURNAL OF APPLIED PHYSICS,113(4),044112.
MLA Zhang, Feng,et al."Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC".JOURNAL OF APPLIED PHYSICS 113.4(2013):044112.
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