| Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC | |
| Zhang, Feng; Sun, Guosheng; Zeng, Yiping | |
| 2013 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 113Issue:4Pages:044112 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-09-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24394 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhang, Feng,Sun, Guosheng,Zeng, Yiping. Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC[J]. JOURNAL OF APPLIED PHYSICS,2013,113(4):044112. |
| APA | Zhang, Feng,Sun, Guosheng,&Zeng, Yiping.(2013).Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC.JOURNAL OF APPLIED PHYSICS,113(4),044112. |
| MLA | Zhang, Feng,et al."Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC".JOURNAL OF APPLIED PHYSICS 113.4(2013):044112. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013152.pdf（862KB） | 限制开放 | License | Application Full Text | |||
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