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0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers
Ji Lian; Lu Shu-Long; Jiang De-Sheng; Zhao Yong-Ming; Tan Ming; Zhu Ya-Qi; Dong Jian-Rong
2013
Source PublicationCHINESE PHYSICS B
Volume22Issue:2Pages:026802
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-09-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24384
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Ji Lian,Lu Shu-Long,Jiang De-Sheng,et al. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers[J]. CHINESE PHYSICS B,2013,22(2):026802.
APA Ji Lian.,Lu Shu-Long.,Jiang De-Sheng.,Zhao Yong-Ming.,Tan Ming.,...&Dong Jian-Rong.(2013).0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers.CHINESE PHYSICS B,22(2),026802.
MLA Ji Lian,et al."0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers".CHINESE PHYSICS B 22.2(2013):026802.
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