SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electrical transport properties of boron-doped single-walled carbon nanotubes
Li, Y. F.; Wang, Y.; Chen, S. M.; Wang, H. F.; Kaneko, T.; Hatakeyama, R.
2013
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume113Issue:5Pages:054313
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24379
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Y. F.,Wang, Y.,Chen, S. M.,et al. Electrical transport properties of boron-doped single-walled carbon nanotubes[J]. JOURNAL OF APPLIED PHYSICS,2013,113(5):054313.
APA Li, Y. F.,Wang, Y.,Chen, S. M.,Wang, H. F.,Kaneko, T.,&Hatakeyama, R..(2013).Electrical transport properties of boron-doped single-walled carbon nanotubes.JOURNAL OF APPLIED PHYSICS,113(5),054313.
MLA Li, Y. F.,et al."Electrical transport properties of boron-doped single-walled carbon nanotubes".JOURNAL OF APPLIED PHYSICS 113.5(2013):054313.
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