Electrical switching of quantum tunneling  through p-n junction in a quantum spin Hall bar

	Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
	Cheng, Fang; Lin, L. Z.; Zhang, L. B.; Zhou, Guanghui
	2013
Source Publication	JOURNAL OF APPLIED PHYSICS
Volume	113 Issue:5 Pages:053708
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2013-09-22
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/24378
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Cheng, Fang,Lin, L. Z.,Zhang, L. B.,et al. Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar[J]. JOURNAL OF APPLIED PHYSICS,2013,113(5):053708.
APA	Cheng, Fang,Lin, L. Z.,Zhang, L. B.,&Zhou, Guanghui.(2013).Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar.JOURNAL OF APPLIED PHYSICS,113(5),053708.
MLA	Cheng, Fang,et al."Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar".JOURNAL OF APPLIED PHYSICS 113.5(2013):053708.

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